PSMN009-100P NXP Semiconductors, PSMN009-100P Datasheet - Page 3

• Manufacturer Part Number: PSMN009-100P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN009-100P
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
DS(AL)S
Fig 1.
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
I
(%)
der
120
100
80
60
40
20
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive drain-source
avalanche current
30
60
90
120
All information provided in this document is subject to legal disclaimers.
150
T
mb
03ah99
(°C)
Conditions
T
T
V
V
see
pulsed; t
T
pulsed; t
T
pulsed; t
V
V
R
V
T
Rev. 4 — 27 December 2011
180
j
j
mb
mb
j(init)
GS
GS
GS
sup
GS
GS
≥ 25 °C; T
≤ 175 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 10 V; V
= 50 Ω
= 15 V; unclamped; t
= 25 °C; unclamped
p
p
p
≤ 10 µs; T
≤ 50 µs; T
≤ 10 µs; T
N-channel TrenchMOS SiliconMAX standard level FET
j
≤ 175 °C
j
mb
mb
j(init)
sup
≥ 25 °C; R
Fig 2.
= 100 °C; see
= 25 °C; see
= 15 V; R
Figure 2
= 25 °C; I
P
(%)
der
mb
j
mb
120
≤ 150 °C; δ = 25 %
80
40
0
= 25 °C; see
= 25 °C
function of mounting base temperature
Normalized total power dissipation as a
0
GS
p
GS
= 0.1 ms;
D
= 20 kΩ
= 35 A;
= 50 Ω;
Figure
Figure 1
50
Figure 3
1;
PSMN009-100P
100
Min
-
-
-20
-
-
-
-
-55
-55
-30
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
20
175
175
Max
100
100
65
75
400
230
30
75
400
120
75
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
A
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