PSMN4R3-100PS NXP Semiconductors, PSMN4R3-100PS Datasheet

PSMN4R3-100PS

Manufacturer Part Number
PSMN4R3-100PS
Description
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current limited by package
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 October 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
see
T
V
see
V
see
V
see
V
I
R
D
j
mb
mb
GS
GS
GS
GS
GS
≥ 25 °C; T
= 120 A; V
Figure 1
Figure 12
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
= 50 Ω; Unclamped
14; see
j
D
D
D
sup
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; T
= 75 A; V
≤ 100 V;
Figure 2
= 10 V;
= 25 °C;
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 50 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
[2]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
6.6
3.7
49
170
-
-
Max
100
120
338
175
7.8
4.3
-
537
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN4R3-100PS Summary of contents

Page 1

... PSMN4R3-100PS N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Simplified outline 1 2 SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Graphic symbol mb G mbb076 3 © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Min - = 20 kΩ -20 Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...

Page 4

... PSMN4R3-100PS Product data sheet N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS 003aag822 =10 μ 100 μ 100 (V) DS © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-100PS Product data sheet N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Min Typ Max - 0.22 0. 003aaf733 t  ...

Page 6

... MHz °C; see Figure 0.67 Ω 4.7 Ω G(ext All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Min Typ Max 100 - - 4 0.08 10 ...

Page 7

... A/µ 003aaf723 90 120 I (A) D Fig 6. 003aag794 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Min Typ = 25 ° 235 100 175 ° ...

Page 8

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...

Page 9

... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS GS(pl) V GS(th GS1 GS2 ...

Page 10

... N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS 003aaf731 = 25 ° C 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN4R3-100PS v.1 20111027 PSMN4R3-100PS Product data sheet N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220 Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 27 October 2011 PSMN4R3-100PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 October 2011 Document identifier: PSMN4R3-100PS ...

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