PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet

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PSMN4R3-100ES,127

Manufacturer Part Number
PSMN4R3-100ES,127
Description
MOSFET N-Ch 100V 4.3 m std level MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN4R3-100ES,127

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
4.3 mOhms
Configuration
Single
Mounting Style
Through Hole
Package / Case
I2PAK
Fall Time
63 ns
Gate Charge Qg
170 nC
Power Dissipation
338 W
Rise Time
91 ns
Factory Pack Quantity
50
1. Product profile
Table 1.
[1]
[2]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current limited by package
Measured 3 mm from package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
PSMN4R3-100ES
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
Rev. 1 — 31 October 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
T
T
V
Conditions
T
V
see
V
see
see
V
V
j
mb
mb
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; R
12; see
14; see
j
D
D
D
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; T
= 75 A; V
GS
Figure 2
= 10 V; see
= 25 °C; I
= 50 Ω; Unclamped
Figure 13
Figure 15
j
j
DS
= 100 °C;
= 25 °C;
= 50 V;
D
= 120 A;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
[1]
[2]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
6.6
3.7
49
170
-
175
Max
100
120
338
7.8
4.3
-
-
537
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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