PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN4R3-100ES
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
10
I
D
10
10
D
200
160
120
10
80
40
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
(1)
100
Limit R
1
150
DSon
All information provided in this document is subject to legal disclaimers.
T
= V
003aag825
mb
DS
( ° C)
/ I
D
200
Rev. 1 — 31 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
PSMN4R3-100ES
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
100
V
DS
(V)
150
© NXP B.V. 2011. All rights reserved.
T
003aag822
mb
03aa16
(°C)
10
200
3
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