PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
Table 6.
[1]
PSMN4R3-100ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
R
(m Ω )
(S)
g
DSon
fs
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
30
8
…continued
60
12
90
16
All information provided in this document is subject to legal disclaimers.
003aag794
003aaf723
I
V
D
GS
(A)
(V)
I
see
Conditions
I
V
S
S
120
GS
20
Rev. 1 — 31 October 2011
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 50 V
(A)
I
(A)
D
I
100
D
80
60
40
20
80
60
40
20
j
0
0
= 25 °C;
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics; drain current as a
0
0
0.2
10.0
PSMN4R3-100ES
T
6.0
j
2
= 175 ° C
5.5
0.4
Min
-
-
-
V
0.6
GS
(V) =
4
Typ
0.8
75
235
V
© NXP B.V. 2011. All rights reserved.
T
0.8
GS
j
003aaf724
003aag793
= 25 ° C
V
(V)
DS
Max
1.2
-
-
(V)
4.5
6
1
Unit
V
ns
nC
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