PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet
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PSMN4R3-30PL,127
Specifications of PSMN4R3-30PL,127
934063918127
Related parts for PSMN4R3-30PL,127
PSMN4R3-30PL,127 Summary of contents
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... PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Ordering information Type number Package Name Description PSMN4R3-30PL TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SC-46 TO-220AB PSMN4R3-30PL_1 Product data sheet PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 01 — 16 June 2009 Graphic symbol D G ...
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... ° 100 j(init Ω; unclamped R GS 003aad235 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 16 June 2009 PSMN4R3-30PL Min Max - - [1] - 100 Figure 3 - 465 - 103 -55 175 -55 175 [1] - 100 - 465 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R3-30PL_1 Product data sheet N-channel 30 V 4.3 mΩ logic level MOSFET Limit DSon Conditions see Figure Rev. 01 — 16 June 2009 PSMN4R3-30PL 003aad296 10 μs 100 μ 100 ( Min Typ Max - 1 1.5 003aad234 δ ...
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... GS see Figure 14; see Figure 4 see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.5 Ω 5.6 Ω R G(ext) Rev. 01 — 16 June 2009 PSMN4R3-30PL Min Typ Max Unit 1.3 1.7 2. µ µ 100 100 nA [2] - 4.5 6.2 mΩ ...
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... /dt = -100 A/µ 003aad244 100 100 0 I (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 01 — 16 June 2009 PSMN4R3-30PL Min Typ Max Unit - 0.81 1 003aad241 = 175 ° ° (V) GS © NXP B.V. 2009. All rights reserved. ...
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... V (V) =2 (V) DS Fig 10. Sub-threshold drain current as a function of gate-source voltage Rev. 01 — 16 June 2009 PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET 003aad238 (V) GS Drain-source on-state resistance as a function 003aab271 min typ max (V) GS © NXP B.V. 2009. All rights reserved. ...
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... Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad237 GS(pl) V GS(th) 4 Fig 14. Gate charge waveform definitions 80 100 I (A) D Rev. 01 — 16 June 2009 PSMN4R3-30PL 03aa27 0 60 120 180 ( ° GS1 GS2 G(tot) 003aaa508 © NXP B.V. 2009. All rights reserved. ...
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... Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° ° 0.5 1 1.5 Rev. 01 — 16 June 2009 PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET 003aad239 C iss C oss C rss - (V) DS 003aad243 2 V (V) SD © NXP B.V. 2009. All rights reserved. ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 01 — 16 June 2009 PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2 ...
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... Revision history Table 7. Revision history Document ID Release date PSMN4R3-30PL_1 20090616 PSMN4R3-30PL_1 Product data sheet N-channel 30 V 4.3 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 16 June 2009 PSMN4R3-30PL Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 16 June 2009 PSMN4R3-30PL © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN4R3-30PL_1 All rights reserved. Date of release: 16 June 2009 ...