PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
Table 6.
[1]
[2]
PSMN4R3-30PL_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
(S)
g
fs
120
80
40
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
40
…continued
60
Conditions
I
see
I
V
S
S
DS
= 25 A; V
= 20 A; dI
80
Figure 17
= 30 V
003aad244
I
D
(A)
100
GS
S
Rev. 01 — 16 June 2009
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
(A)
GS
I
D
100
80
60
40
20
0
= 0 V;
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
N-channel 30 V 4.3 mΩ logic level MOSFET
1
T
j
= 175 °C
PSMN4R3-30PL
2
Min
-
-
-
3
Typ
0.81
35
30
25 °C
© NXP B.V. 2009. All rights reserved.
4
003aad241
V
Max
1.2
-
-
GS
(V)
5
Unit
V
ns
nC
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