PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
PSMN4R3-30PL_1
Product data sheet
Fig 7.
Fig 9.
(A)
I
(pF)
D
5000
4000
3000
2000
1000
C
100
80
60
40
20
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
3.5
4
1
10
5
3
2
6
3
V
GS
(V) =2.5
9
V
4
003aad240
003aad236
GS
3
V
C
C
DS
(V)
iss
rss
(V)
12
5
Rev. 01 — 16 June 2009
Fig 8.
Fig 10. Sub-threshold drain current as a function of
R
(mΩ)
DSon
10
10
10
10
10
10
(A)
I
D
12
-1
-2
-3
-4
-5
-6
8
4
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
N-channel 30 V 4.3 mΩ logic level MOSFET
min
5
1
PSMN4R3-30PL
10
typ
2
© NXP B.V. 2009. All rights reserved.
V
V
GS
003aad238
003aab271
GS
max
(V)
(V)
15
3
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