PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 9
![MOSFET N-CH 30V 100A TO-220AB3](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN4R3-30PL,127
Manufacturer Part Number
PSMN4R3-30PL,127
Description
MOSFET N-CH 30V 100A TO-220AB3
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R3-30PL127.pdf
(13 pages)
Specifications of PSMN4R3-30PL,127
Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
41.5nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 12V
Power - Max
103W
Mounting Type
Through Hole
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
100 A
Power Dissipation
103 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4897-5
934063918127
934063918127
NXP Semiconductors
PSMN4R3-30PL_1
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
V
DS
= 15V
40
(A)
I
S
100
80
60
40
20
0
Q
0
G
003aad242
(nC)
T
60
j
Rev. 01 — 16 June 2009
= 175 °C
0.5
1
Fig 16. Input, output and reverse transfer capacitances
25 °C
10
(pF)
10
10
C
1.5
4
3
2
10
as a function of drain-source voltage; typical
values
N-channel 30 V 4.3 mΩ logic level MOSFET
-1
003aad243
V
SD
(V)
2
1
PSMN4R3-30PL
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad239
C
(V)
C
C
oss
rss
iss
10
2
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