PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
PSMN4R3-30PL_1
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
V
DS
= 15V
40
(A)
I
S
100
80
60
40
20
0
Q
0
G
003aad242
(nC)
T
60
j
Rev. 01 — 16 June 2009
= 175 °C
0.5
1
Fig 16. Input, output and reverse transfer capacitances
25 °C
10
(pF)
10
10
C
1.5
4
3
2
10
as a function of drain-source voltage; typical
values
N-channel 30 V 4.3 mΩ logic level MOSFET
-1
003aad243
V
SD
(V)
2
1
PSMN4R3-30PL
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad239
C
(V)
C
C
oss
rss
iss
10
2
9 of 13