PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R3-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 12V
• Power - Max: 103W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 103 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4897-5; 934063918127

NXP Semiconductors
PSMN4R3-30PL_1
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
GS (th)
(V)
16
12
3
2
1
0
8
4
0
-60
junction temperature
of drain current; typical values
0
20
0
3
40
max
min
typ
60
V
GS
60
3.5
(V) =10
120
4
80
003aad237
003a a c982
T
I
j
D
(°C)
(A)
4.5
5
180
100
Rev. 01 — 16 June 2009
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
N-channel 30 V 4.3 mΩ logic level MOSFET
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN4R3-30PL
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2009. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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