PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
8. Revision history
Table 7.
PSMN4R3-100ES
Product data sheet
Document ID
PSMN4R3-100ES v.1
Revision history
20111031
Release date
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
Data sheet status
Product data sheet
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
Change notice
-
PSMN4R3-100ES
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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