PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN4R3-100ES
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(m Ω )
V
(V)
DSon
GS
10
7
6
5
4
3
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) =
V
DS
20
50
= 20V
80V
50V
100
40
150
60
All information provided in this document is subject to legal disclaimers.
Q
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I
G
D
(nC)
(A)
10.0
5.5
6.0
8.0
200
80
Rev. 1 — 31 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN4R3-100ES
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2011. All rights reserved.
DS
003aaf730
003aaa508
(V)
C
C
C
oss
rss
iss
10
2
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