PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-100ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN7R0-100ES_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S )
g
(A)
I
240
fs
180
120
D
300
240
180
120
60
60
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
50
10
1
20
100
…continued
2
150
6
Conditions
I
I
V
S
S
DS
= 25 A; V
= 25 A; dI
3
V
200
5.5
All information provided in this document is subject to legal disclaimers.
= 50 V
GS
003a a d562
003a a d572
V
(V) = 4
DS
I
D
4.5
(V)
(A)
5
Rev. 03 — 23 February 2010
250
GS
S
4
/dt = 100 A/µs; V
= 0 V; T
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
j
= 25 °C; see
Fig 6.
Fig 8.
12000
10000
GS
(pF)
(A)
8000
6000
4000
2000
I
C
D
60
45
30
15
= 0 V;
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Transfer characteristics: drain current as a
0
0
Figure 17
5
PSMN7R0-100ES
T
j
2
= 175 °C
Min
-
-
-
10
Typ
0.8
64
167
4
15
T
© NXP B.V. 2010. All rights reserved.
j
V
= 25 °C
003a a d566
003a a d568
GS
V
Max
1.2
-
-
GS
(V)
C
C
is s
rs s
(V)
20
6
nC
Unit
V
ns
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