PSMN7R0-100ES NXP Semiconductors, PSMN7R0-100ES Datasheet - Page 8

• Manufacturer Part Number: PSMN7R0-100ES
• Description: Standard level N-channel MOSFET in I2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN7R0-100ES_3
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
DS on
I
10
10
10
10
10
10
D
40
30
20
10
−1
−2
−3
−4
−5
−6
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
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GS
V
003a a d571
GS
(V)
03aa35
(V)
Rev. 03 — 23 February 2010
20
6
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
junction temperature
factor as a function of junction temperature
-60
0
0
PSMN7R0-100ES
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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