PSMN8R0-40BS NXP Semiconductors, PSMN8R0-40BS Datasheet - Page 3

PSMN8R0-40BS

Manufacturer Part Number
PSMN8R0-40BS
Description
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN8R0-40BS
Product data sheet
Fig 1.
Fig 3.
(A)
10
10
I
D
10
(A)
80
60
40
20
I
3
2
1
D
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
150
All information provided in this document is subject to legal disclaimers.
T
003aad067
DSon
mb
1
(°C)
= V
200
DS
Rev. 2 — 2 March 2012
/ I
D
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
PSMN8R0-40BS
100
100 ms
150
1 ms
10 ms
100 μs
10 μs
V
© NXP B.V. 2012. All rights reserved.
DS
T
003aad298
mb
(V)
03aa16
(°C)
200
10
2
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