PSMN8R0-40BS NXP Semiconductors, PSMN8R0-40BS Datasheet - Page 7

• Manufacturer Part Number: PSMN8R0-40BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN8R0-40BS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
R
(mΩ)
DSon
50
40
30
20
10
0
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
5
0
10
60
max
min
typ
15
120
V
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GS
003aad066
003aad280
T
j
(V)
(°C)
180
20
Rev. 2 — 2 March 2012
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
2
PSMN8R0-40BS
min
60
typ
4
120
max
V
© NXP B.V. 2012. All rights reserved.
GS
T
j
(V)
( ° C)
03aa35
03aa27
180
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