PSMN8R0-40BS NXP Semiconductors, PSMN8R0-40BS Datasheet - Page 6

• Manufacturer Part Number: PSMN8R0-40BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Tested to JEDEC standards where applicable.
PSMN8R0-40BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
2000
1500
1000
C
500
(A)
150
100
I
D
50
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Input and reverse transfer capacitances as a
2
0
Characteristics
20
C
C
iss
rss
10
Parameter
source-drain voltage
reverse recovery time
recovered charge
8
2
4
4
…continued
6
6
V
GS
8
(V) =
Conditions
I
see
I
V
I
V
All information provided in this document is subject to legal disclaimers.
S
S
S
8
V
DS
DS
003aad064
003aad058
V
= 25 A; V
= 50 A; dI
= 50 A; dI
GS
DS
Figure 17
= 20 V
= 20 V; T
(V)
5.5
4.5
7
6
(V)
5
10
10
Rev. 2 — 2 March 2012
GS
S
S
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
= 25 °C
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
100
(S)
50
40
30
20
10
(A)
g
80
60
40
20
I
fs
0
D
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
GS
GS
0
0
= 0 V;
= 0 V;
25
2
T
j
= 175 °C
PSMN8R0-40BS
Min
-
-
-
50
4
Typ
0.85
30
18
25 °C
75
6
© NXP B.V. 2012. All rights reserved.
V
003aad065
003aad060
I
D
GS
(A)
Max
1.2
-
-
(V)
100
8
Unit
V
ns
nC
6 of 14