BLF6G27LS-50BN NXP Semiconductors, BLF6G27LS-50BN Datasheet - Page 5

• Manufacturer Part Number: BLF6G27LS-50BN
• Description: 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
885
20
30
40
50
60
70
10
8
6
4
2
0
0
V
function of load power; typical values
0
V
ratio as a function of load power;
typical values
Single carrier IS-95 ACPR at 885 kHz as a
Single carrier IS-95 peak-to-average power
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
7.3 Pulsed CW
5
5
Dq
Dq
= 430 mA.
= 430 mA.
10
10
15
15
(1)
(2)
(3)
20
20
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001aan481
001aan485
P
P
L
L
(W)
(W)
25
25
Rev. 2 — 7 April 2011
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
1980
15
30
45
60
75
90
60
40
20
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
V
Single carrier IS-95 peak power as a function
of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
BLF6G27L(S)-50BN
5
5
Dq
Dq
= 430 mA.
= 430 mA.
10
10
(1)
(2)
(3)
Power LDMOS transistor
15
15
© NXP B.V. 2011. All rights reserved.
20
20
001aan484
001aan486
(1)
(2)
(3)
P
P
L
L
(W)
(W)
25
25
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