BLF6G27LS-50BN NXP Semiconductors, BLF6G27LS-50BN Datasheet - Page 8

45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF6G27LS-50BN

Manufacturer Part Number
BLF6G27LS-50BN
Description
45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Fig 11. 2-carrier W-CDMA ACPR at 5 MHz as a
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
5M
10
20
30
40
50
0
0
V
function of load power; typical values
DS
= 28 V; I
5
Dq
= 430 mA.
10
(1)
(2)
(3)
15
20
All information provided in this document is subject to legal disclaimers.
001aan491
P
L
(W)
25
Rev. 2 — 7 April 2011
Fig 12. 2-carrier W-CDMA ACPR at 10 MHz as a
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
10M
10
20
30
40
50
60
0
V
function of load power; typical values
DS
= 28 V; I
BLF6G27L(S)-50BN
5
Dq
= 430 mA.
10
(1)
(2)
(3)
Power LDMOS transistor
15
© NXP B.V. 2011. All rights reserved.
20
001aan492
P
L
(W)
25
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