BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet
BLF7G22L-250P
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BLF7G22L-250P Summary of contents
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... BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 2 — 28 October 2011 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; carrier spacing 5 MHz ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G22L-250P (SOT539A BLF7G22LS-250P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G22L-250P BLF7G22LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... Symbol P L(AV D ACPR 7.1 Ruggedness in class-AB operation The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P Thermal characteristics Characteristics Conditions ...
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... Table 8. Measured load-pull data half device (MHz) 2050 2110 2140 2170 2230 [1] Z and Z S Fig 1. Definition of transistor impedance BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P Typical impedance = 1900 mA [ () 1.50 j5.20 2.08 j5.64 2.16 j5.89 2.43 j5.97 3.94 j7.60 defined in Figure 1. L gate ...
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... 1900 mA ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 2. Power gain as a function of average load power; typical values BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P aaa-001318 60 η D (%) 250 300 350 0 P (W) ...
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... PAR = 7 0.01 probability on the CCDF ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 6. Adjacent power channel ratio (5 MHZ) as function of average load power; typical values BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P aaa-001320 50 8 η PAR D (%) (dB ...
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... 1900 mA; Channel Spacing = 5 MHz PAR = 8 0.01 probability on the CCDF. ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 9. Drain efficiency as function of average load power; typical values BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P aaa-001323 50 19.0 η (%) (dB ...
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... R1 R2 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] TDK or capacitor of same quality. BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P C4 C12 List of components for component layout. Description multilayer ceramic chip capacitor ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 12. Package outline SOT539A BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 13. Package outline SOT539B BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P ...
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... Revision history Table 11. Revision history Document ID BLF7G22L-250P_22LS-250P v.2 Modifications: BLF7G22L-250P_22LS-250P v.1 BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-250P_22LS-250P Product data sheet BLF7G22L-250P; BLF7G22LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 28 October 2011 Document identifier: BLF7G22L-250P_22LS-250P ...