BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 7

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-250P_22LS-250P
Product data sheet
Fig 7.
Fig 9.
(dB)
(%)
G
η
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
D
p
50
40
30
20
10
0
0
0
V
Spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on
the CCDF.
Power gain and drain efficiency as functions
of average load power; typical values
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
Drain efficiency as function of average load
power; typical values
DS
DS
= 28 V; I
= 28 V; I
G
7.5 2-carrier W-CDMA
η
p
D
40
40
Dq
Dq
= 1900 mA; f = 2140 MHz; Channel
= 1900 mA; Channel Spacing = 5 MHz;
80
80
(1)
(2)
(3)
120
120
BLF7G22L-250P; BLF7G22LS-250P
P
P
All information provided in this document is subject to legal disclaimers.
L(AV)
L(AV)
aaa-001323
aaa-001325
(W)
(W)
160
160
Rev. 2 — 28 October 2011
50
40
30
20
10
0
(%)
η
D
Fig 8.
Fig 10. Adjacent power channel ratio (5 MHZ) as
ACPR
(dBc)
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
p
-20
-30
-40
-50
5M
0
0
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
Power gain as a function of average load
power; typical values
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
function of average load power; typical values
DS
DS
(1)
(2)
= 28 V; I
= 28 V; I
(3)
(2)
(1)
40
40
Dq
Dq
(3)
= 1900 mA; Channel Spacing = 5 MHz;
= 1900 mA; Channel Spacing = 5 MHz;
80
80
Power LDMOS transistor
120
120
P
P
© NXP B.V. 2011. All rights reserved.
L(AV)
L(AV)
aaa-001324
aaa-001326
(W)
(W)
160
160
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