BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet
![100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz](/photos/41/53/415358/sot1121a_3d_sml.gif)
BLF7G22L-100P
Related parts for BLF7G22L-100P
BLF7G22L-100P Summary of contents
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... BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical RF performance at T Test signal 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; carrier spacing 5 MHz ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G22L-100P (SOT1121A BLF7G22LS-100P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G22L-100P BLF7G22LS-100P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... D ACPR 5M 7.1 Ruggedness in class-AB operation The BLF7G22L-100P and BLF7G22LS-100P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C ...
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... NXP Semiconductors 7.2 Impedance information Table 8. Measured load pull data. Typical values unless otherwise specified. f MHz 2110 2140 2170 Fig 1. BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P Typical push-pull impedance Z S 1.79 j4.95 2.37 j5.49 2.54 j5.86 gate Z S Definition of transistor impedance All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 7.3 One Tone CW ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 2. 7.4 One Tone CW-Pulsed ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 3. BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P (dB (1) (2) (3) 10 η ...
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... MHz MHz ( 2110 MHz; f 5 MHz ( 2140 MHz; f 5 MHz ( 2170 MHz; f 5 MHz Fig 5. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P (dB ...
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... MHz MHz ( 2110 MHz; f 5 MHz ( 2140 MHz; f 5 MHz ( 2170 MHz; f 5 MHz Fig 8. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P (dB ...
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... C3, C4, C6, C7 C5, C8 C11, C12 C13, C14 R1, R2 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 800B or capacitor of same quality. BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. r List of components Figure 10 ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 11. Package outline SOT1121A BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 12. Package outline SOT1121B BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P ...
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... ESD LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA 10. Revision history Table 11. Revision history Document ID BLF7G22L-100P_BLF7G22LS-100P v.3 20120102 Modifications: BLF7G22L-100P_BLF7G22LS-100P v.2 20111110 BLF7G22L-100P_BLF7G22LS-100P v.1 20110519 BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical Channel ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-100P_BLF7G22LS-100P Product data sheet BLF7G22L-100P; BLF7G22LS-100P product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 2 January 2012 Document identifier: BLF7G22L-100P_BLF7G22LS-100P ...