BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet - Page 4

• Manufacturer Part Number: BLF7G22L-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
7.2 Impedance information
Table 8.
Measured load pull data. Typical values unless otherwise specified.
f
MHz
2110
2140
2170
Fig 1.
Definition of transistor impedance
Typical push-pull impedance
BLF7G22L-100P; BLF7G22LS-100P
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 2 January 2012
Z

1.79 j4.95
2.37  j5.49
2.54  j5.86
S
gate
Z
S
001aal831
drain
Z
L
Z

2.27  j3.64
2.27 j3.64
1.84j3.57
L
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
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