BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet - Page 8

• Manufacturer Part Number: BLF7G22L-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
Fig 10. Component layout for class-AB production test circuit
60 mm
Printed-Circuit Board (PCB): Taconic RF35; 
See
Table 9
C5
7.7 Test circuit
for a list of components.
Table 9.
For test circuit see
[1]
[2]
Component
C1, C2, C9, C10
C3, C4, C6, C7
C5, C8
C11, C12
C13, C14
R1, R2
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
C3
C4
50 mm
List of components
R1
R2
BLF7G22L-100P; BLF7G22LS-100P
All information provided in this document is subject to legal disclaimers.
C1
C2
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
Chip resistor
r
Rev. 3 — 2 January 2012
10.
15 mm
15 mm
= 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
18.5 mm
18.5 mm
Value
8.2 pF
1 F
33 pF
0.1 F
1000 F; 50 V
5.1 
C10
C9
Power LDMOS transistor
C11
C12
C6
C7
[1]
[2]
© NXP B.V. 2012. All rights reserved.
Remarks
Murata
Murata
Vishay Dale 0805
C8
C13
C14
aaa-001317
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