BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet - Page 6

• Manufacturer Part Number: BLF7G22L-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
Fig 4.
Fig 5.
ACPR
(dBc)
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz; f + 5 MHz
(2) f = 2140 MHz; f + 5 MHz
(3) f = 2170 MHz; f + 5 MHz
(4) f = 2110 MHz; f  5 MHz
(5) f = 2140 MHz; f  5 MHz
(6) f = 2170 MHz; f  5 MHz
-10
-30
-50
-70
5M
36
V
Power gain and drain efficiency as a function of load power; typical values
V
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
7.5 1-Carrier W-CDMA
(1)
(2)
(3)
Dq
Dq
40
= 720 mA.
= 720 mA.
(dB)
44
G
p
35
30
25
20
15
10
5
0
BLF7G22L-100P; BLF7G22LS-100P
P
36
L
All information provided in this document is subject to legal disclaimers.
aaa-001312
(dBm)
(4)
(5)
(6)
(1)
48
Rev. 3 — 2 January 2012
G
η
(2)
D
p
40
(3)
Fig 6.
PAR
(dB)
44
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
8
6
4
2
0
P
36
V
Peak-to-average ratio as a function of load
power; typical values
L
DS
aaa-001311
(dBm)
= 28 V; I
48
70
60
50
40
30
20
10
0
(1)
(2)
(3)
Dq
40
(%)
η
= 720 mA.
D
Power LDMOS transistor
44
P
© NXP B.V. 2012. All rights reserved.
L
aaa-001313
(dBm)
48
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