BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet - Page 9

• Manufacturer Part Number: BLF7G22L-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Package outline
Fig 11. Package outline SOT1121A
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
H
mm
Unit
SOT1121A
Outline
version
U
A
A
(1)
max
nom
max
nom
2
min
min
0.187
0.136
4.75
3.45
A
0.155
0.145
3.94
3.68
b
0.007
0.004
0.18
0.10
IEC
c
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D
1
1
3
BLF7G22L-100P; BLF7G22LS-100P
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
9.53
9.27
E
References
D
U
H
Rev. 3 — 2 January 2012
D
q
e
0.375
0.365
0
1
1
1
9.53
9.27
E
1
0.045
0.035
1.14
0.89
F
JEITA
b
scale
19.94
18.92
0.785
0.745
5
H
2
4
12.83
12.57
0.505
0.495
H
1
w
2
0.133
0.123
10 mm
3.38
3.12
p
C
0.067
0.057
Q
1.70
1.45
(2)
27.94
5
1.1
q
w
1
34.16
33.91
1.345
1.335
U
European
projection
1
B
C
p
F
A
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
B
E
0.25
0.01
w
1
1
© NXP B.V. 2012. All rights reserved.
0.51
0.02
w
Q
2
Issue date
09-10-12
10-02-02
c
sot1121a_po
SOT1121A
9 of 14
E