BLF7G22LS-130 NXP Semiconductors, BLF7G22LS-130 Datasheet - Page 2

• Manufacturer Part Number: BLF7G22LS-130
• Description: 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G22L-130_7G22LS-130
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G22L-130 (SOT502A)
1
2
3
BLF7G22LS-130 (SOT502B)
1
2
3
Type number
BLF7G22L-130
BLF7G22LS-130
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G22L-130; BLF7G22LS-130
Rev. 4 — 20 January 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
28
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 15
Unit
V
V
A
°C
°C