BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 10

135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz

BLF7G27L-135

Manufacturer Part Number
BLF7G27L-135
Description
135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF7G27L-135
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G27L-135
Objective data sheet
Document ID
BLF7G27L-135 v.1
Revision history
Table 8.
Acronym
3GPP
CCDF
CW
DPCH
ESD
IS-95
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Release date
20111101
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
ElectroStatic Discharge
Interim Standard 95
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Objective data sheet
Rev. 1 — 1 November 2011
Change notice
-
BLF7G27L-135
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
-
Supersedes
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