BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 7

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-135
Objective data sheet
Fig 9.
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
ACPR
(dBc)
(dB)
G
(1) f = 2600 MHz
(2) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2700 MHz
p
-20
-30
-40
-50
-60
5M
18
17
16
15
14
13
0
V
Single carrier W-CDMA power gain as a
function of average output power;
typical values
0
V
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
7.4 Single carrier W-CDMA
20
20
Dq
Dq
(2)
(1)
(2)
(1)
= 1300 mA.
= 1300 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
40
40
60
60
P
P
All information provided in this document is subject to legal disclaimers.
aaa-000098
L(AV)
aaa-000100
L(AV)
(W)
(W)
Rev. 1 — 1 November 2011
80
80
Fig 10. Single carrier W-CDMA drain efficiency as a
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
ACPR
(dBc)
(%)
η
(1) f = 2600 MHz
(2) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2700 MHz
D
10M
-30
-40
-50
-60
-70
50
40
30
20
10
0
0
0
V
function of average output power;
typical values
V
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
(2)
(1)
= 1300 mA.
= 1300 mA.
BLF7G27L-135
40
40
Power LDMOS transistor
(1)
(2)
60
60
© NXP B.V. 2011. All rights reserved.
P
P
aaa-000099
L(AV)
aaa-000101
L(AV)
(W)
(W)
80
80
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