BLF7G27L-135 NXP Semiconductors, BLF7G27L-135 Datasheet - Page 3

• Manufacturer Part Number: BLF7G27L-135
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
7. Test information
BLF7G27L-135
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
T
The BLF7G27L-135 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
Dq
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
L(AV)
DS(on)
p
= 25
in
= 1300 mA; P
= 25
885k

C unless otherwise specified.

drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
C; unless otherwise specified.
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
1
All information provided in this document is subject to legal disclaimers.
= 2600 MHz; f
L
= 135 W (CW); f = 2600 MHz.
Rev. 1 — 1 November 2011
2
= 2700 MHz; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 7.56 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
GS(th)
GS(th)
D
DS
D
D
= 1 mA
+ 3.75 V;
DS
+ 3.75 V;
= 216 mA
= 216 mA
= 28 V
= 0 V
BLF7G27L-135
DS
Power LDMOS transistor
= 28 V; I
Min
-
14.8
-
20
-
Min
65
1.5
-
34.2 40.5 -
-
-
-
DS
= 28 V;
© NXP B.V. 2011. All rights reserved.
Typ
25
16.5
12
24
45
Dq
Typ
-
1.8
-
-
1.87 -
0.07 -
= 1300 mA;
Max Unit
-
17.7 dB
-
-
40
Max Unit
-
2.3
5
500
3 of 13
W
dB
%
dBc
V
V
A
A
nA
S
