BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 5
![200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz](/photos/41/53/415360/sot1110a_3d_sml.gif)
BLF7G27L-200PB
Manufacturer Part Number
BLF7G27L-200PB
Description
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-200PB.pdf
(14 pages)
NXP Semiconductors
BLF7G27L-200PB
Product data sheet
Fig 4.
Fig 6.
G%
*
S
S S
(1) G
(2) G
(3) G
(4)
(5)
(6)
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
V
probability on the CCDF.
Power gain and drain efficiency as function of
average load power; typical values
V
Adjacent power channel ratio (5 MHz) as a function of average load power; typical values
DS
D
D
D
DS
p
p
p
; f = 2620 MHz
; f = 2650 MHz
; f = 2690 MHz
; f = 2620 MHz
; f = 2650 MHz
; f = 2690 MHz
= 32 V; I
= 32 V; I
7.4 1-carrier W-CDMA
Dq
Dq
= 1700 mA; PAR = 7.2 dB at 0.01
= 1700 mA; PAR = 7.2 dB at 0.01 probability on the CCDF.
$&35
G%F
3
0
/$9
All information provided in this document is subject to legal disclaimers.
DDD
:
Rev. 2 — 20 February 2012
'
Fig 5.
3$5
G%
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
3
/$9
V
probability on the CCDF.
Peak-to-average power ratio as a function of
peak power; typical values
DS
DDD
:
= 32 V; I
BLF7G27L-200PB
Dq
= 1700 mA; PAR = 7.2 dB at 0.01
Power LDMOS transistor
3
/$9
© NXP B.V. 2012. All rights reserved.
DDD
:
5 of 14