BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-200PB
Product data sheet
Fig 7.
Fig 9.
G%
*
'
S
S S
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz












V
channel spacing = 5 MHz; PAR = 8.4 dB at 0.01 
probability on the CCDF.
Power gain and drain efficiency as function of
average load power; typical values

V
PAR = 8.4 dB at 0.01  probability on the CCDF.
Drain efficiency as a function of average load
power; typical values
DS
DS
= 32 V; I
= 32 V; I


7.5 2-carrier W-CDMA
Dq
Dq
= 1700 mA; f = 2650 MHz;
= 1700 mA; channel spacing = 5 MHz;







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All information provided in this document is subject to legal disclaimers.
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S
Rev. 2 — 20 February 2012







'
Fig 8.
Fig 10. Adjacent power channel ratio (5 MHz) as a
$&35
G%F
G%
*
S
S S
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz






0






V
PAR = 8.4 dB at 0.01  probability on the CCDF.
Power gain as a function of average load
power; typical values
V
PAR = 8.4 dB at 0.01  probability on the CCDF.
function of average load power; typical values
DS
DS



= 32 V; I
= 32 V; I


BLF7G27L-200PB
Dq
Dq
= 1700 mA; channel spacing = 5 MHz;
= 1700 mA; channel spacing = 5 MHz;





Power LDMOS transistor


3
3
/ $9
/ $9
© NXP B.V. 2012. All rights reserved.


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