BLF7G27L-200PB NXP Semiconductors, BLF7G27L-200PB Datasheet - Page 7

• Manufacturer Part Number: BLF7G27L-200PB
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-200PB
Product data sheet
Fig 11. Single carrier IS-95 power gain as a function of
Fig 13. Single carrier IS-95 ACPR at 885 kHz as a
$&35
G%F
G%
*
S
S S
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz





N








V
average output power; typical values

V
function of average output power;
typical values
DS
DS
= 32 V; I
= 32 V; I


7.6 IS-95
Dq
Dq



= 1700 mA.
= 1700 mA.




3
3
/ $9
/ $9





All information provided in this document is subject to legal disclaimers.
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:
Rev. 2 — 20 February 2012


Fig 12. Single carrier IS-95 drain efficiency as a
$&35
Fig 14. Single carrier IS-95 at ACPR at 1980 kHz as a
'
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
 N
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz












V
function of average load power; typical values
V
function of average output power; typical
values
DS
DS
= 32 V; I
= 32 V; I


BLF7G27L-200PB
Dq
Dq
= 1700 mA.
= 1700 mA.


Power LDMOS transistor


3
/ $9






3
© NXP B.V. 2012. All rights reserved.


/ $9
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