STTH6012 STMicroelectronics, STTH6012 Datasheet

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STTH6012

Manufacturer Part Number
STTH6012
Description
Ultrafast recovery - 1200 V diode
Manufacturer
STMicroelectronics
Datasheet

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STTH6012W
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Main product characteristics
Features and benefits
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
V
t
rr
V
I
F
F(AV)
RRM
(typ)
T
(typ)
j
1200 V
175° C
1.30 V
50 ns
60 A
Rev 1
Ultrafast recovery - 1200 V diode
Order codes
Part Number
STTH6012W
STTH6012W
A
DO-247
K
K
STTH6012
www.st.com
A
STTH6012W
Marking
1/8
8

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STTH6012 Summary of contents

Page 1

... March 2006 Ultrafast recovery - 1200 V diode 60 A 1200 V 175° Order codes Part Number STTH6012W Rev 1 STTH6012 DO-247 STTH6012W Marking STTH6012W 1/8 www.st.com 8 ...

Page 2

... Test conditions T = 25° 125° 25° 125° 150° (RMS) STTH6012 Value 1200 90° 500 400 - 175 175 Unit °C/W Min. Typ Max. 30 RRM 30 300 2.25 1.35 2.05 1.30 1 ...

Page 3

... STTH6012 Table 4. Dynamic characteristics Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM S Softness factor t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average current P(W) 160 δ = 0.2 140 δ = 0.1 120 δ = 0.05 100 (A) F(AV ...

Page 4

... F(AV F(AV F(AV) dI /dt(A/µ 100 150 200 250 300 350 Relative variations of dynamic parameters versus junction temperature S factor (° 100 STTH6012 400 450 500 400 450 500 F(AV) V =600V R Reference: T =125°C j 125 ...

Page 5

... STTH6012 Figure 9. Transient peak forward voltage versus dI /dt (typical values ( F(AV) T =125° /dt(A/µ 100 200 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 100 V ( Figure 10. Forward recovery time versus dI ...

Page 6

... ECOPACK specifications are available at: www.st.com. 6/8 REF Dia 15.45 L 19. 14. Dia. STTH6012 DIMENSIONS Millimeters Inches Min. Max Min. 4.85 5.15 0.191 2.20 2.60 0.086 0.40 0.80 0.015 1.00 1.40 0.039 2.00 0.078 2.00 2.40 0.078 10.90 0.429 15.75 0.608 20.15 0.781 3.70 4.30 0.145 18.50 0.728 14.80 0.559 34 ...

Page 7

... STTH6012 3 Ordering information Part Number STTH6012W 4 Revision history Date 02-Mar-2006 Marking Package STTH6012W DO-247 Revision 1 First issue. Ordering information Weight Base qty Delivery mode 30 Tube 4.4 g Description of Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: time, without notice. SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. liability of ST. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH6012 ...

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