STM8TL53C4 STMicroelectronics, STM8TL53C4 Datasheet - Page 52

• Manufacturer Part Number: STM8TL53C4
• Description: 8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection
• Manufacturer: STMicroelectronics

Specifications of STM8TL53C4

• Operating Power Supply: 1.65 V to 3.6 V
• Temperature Range: –40 °C to 85 °C
• 4 Low Power Modes: Wait, Active-halt with AWU (1 μA), Active-halt with ProxSense™ (10 μA with scan every 200 ms),Halt (0.4 μA)
• Dynamic Power Consumption: 150 μA/MHz
• Fast Wakeup From Halt Mode: 4.7 μs
• Ultralow Leakage Per I/o: 50 nA

Electrical parameters
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Table 33.
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 34.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 35.
1. Data based on characterization results, not tested in production.
2. Device sustained up to 3000 V during ESD trials.
Symbol
V
V
Symbol
V
V
Symbol
ESD(HBM)
ESD(CDM)
FESD
EFTB
S
EMI
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
EMS data
EMI data
ESD absolute maximum ratings
Parameter
Peak level
(1)
Ratings
Parameter
V
Conditions
T
Doc ID 022344 Rev 1
A
DD
= +25 °C
= 3.6 V,
DD
and V
SS
Monitored frequency
30 MHz to 130 MHz
0.1 MHz to 30 MHz
130 MHz to 1 GHz
SAE EMI Level
Conditions
T
A
UFQFPN48, V
UFQFPN48, V
band
= +25 °C
UFQFPN48, V
Conditions
DD
DD
= 3.3 V, f
DD
= 3.3 V, f
Max vs. 16
= 3.3 V
Maximum
value
2000
MHz
TBD
TBD
TBD
TBD
1000
HSI
STM8TL53xx
HSI
(2)
(1)
/2
Level/
dBμV
Class
Unit
Unit
3B
3B
4A
-
V