STM8L151G3 STMicroelectronics, STM8L151G3 Datasheet - Page 93

• Manufacturer Part Number: STM8L151G3
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L151G3

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temperature Range: -40 to 85 or 125 °C
• 5 Low Power Modes: Wait, Low power run, Low power wait, Active-halt with RTC, Halt
• Ultralow Leakage Per I/0: 50 nA
• Fast Wakeup From Halt: 5 μs
• Max Freq: 16 MHz, 16 CISC MIPS peak

STM8L151x2, STM8L151x3
Table 49.
7.3.13
(cycles)
192
384
16
24
48
96
t
4
9
S
0.5625
Figure 41. Max. dynamic current consumption on V
R
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
0.25
(µs)
1.5
12
24
t
1
3
6
AIN
S
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
max for f
2.4 V < V
Not allowed
conversion
ADC
15.0
32.0
50.0
0.8
2.0
3.0
6.8
DDA
= 16 MHz
< 3.6 V 1.8 V < V
Slow channels
Doc ID 018780 Rev 3
Not allowed
Not allowed
10.0
25.0
50.0
0.8
1.8
4.0
DDA
R
< 2.4 V 2.4 V < V
AIN
max (kohm)
REF+
15.0
30.0
50.0
50.0
0.7
2.0
4.0
6.0
DDA
supply pin during ADC
< 3.3 V
Fast channels
Electrical parameters
1.8 V < V
Not allowed
10.0
20.0
40.0
50.0
3.0
4.5
1.0
DD
DDA
and V
< 2.4 V
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