ACS110 STMicroelectronics, ACS110 Datasheet - Page 7
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ACS110
Manufacturer Part Number
ACS110
Description
Overvoltage protected AC switch
Manufacturer
STMicroelectronics
Datasheet
1.ACS110.pdf
(10 pages)
Specifications of ACS110
Blocking Voltage
VDRM / VRRM = +/-700V
Avalanche Controlled
VCL typ = 1100 V
Nominal Conducting Current
IT(RMS) = 1A
High Noise Immunity
static dV/dt >500V/µs
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ACS110-7SB2
Manufacturer:
STMicroelectronics
Quantity:
1 050
Part Number:
ACS110-7SN
Manufacturer:
ST
Quantity:
20 000
Fig. 4: Relative variation of gate trigger current,
holding current and latching versus junction
temperature (typical values).
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 8: Surge peak on-state current versus number
of cycles.
10
Fig. 6: Relative variation of critical rate of de-
crease of main current versus reapplied dV/dt
(typical values).
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
9
8
7
6
5
4
3
2
1
0
-40 -30 -20 -10
1
I
0
I
TSM
(dI/dt) [(dV/dt) ] / Specified (dI/dt)
GT H L
, I , I [T ] / I
(A)
I & I
L
c
Number of cycles
5
I
GT
H
j
Repetitive
T =105°C
10
ab
GT H L
0
c
Non repetitive
T initial=25°C
, I , I [T = 25°C]
j
10
15
10
20
j
20
30
(dV/dt) (V/µs)
40 50
T (°C)
j
25
c
c
60
30
70
100
80
35
90 100 110 120 130
40
V
t=20ms
OUT
=400V
45
1000
50
Fig. 5: Relative variation of static dV/dt versus
junction temperature.
8
7
6
5
4
3
2
1
0
Fig. 7: Relative variation of critical rate of decrease
of main current versus junction temperature.
20
18
16
14
12
10
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I²t.
100.0
8
6
4
2
0
10.0
25
1.0
dV/dt [T ] / dV/dt [T = 125°C]
25
0.1
(dI/dt) [Tj] / (dI/dt) [T = 125°C]
0.01
I
TSM
c
j
(A), I²t (A²s)
50
50
j
c
0.10
j
T (°C)
T (°C)
j
t (ms)
75
j
p
75
ACS110-7SN/SB2
1.00
100
100
I
I²t
TSM
T initial=25°C
V
j
V
OUT
OUT
=400V
=460V
7/10
10.00
125
125