AP1005BSQ Advanced Power Electronics Corp., AP1005BSQ Datasheet
![The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible](/photos/42/35/423543/120s_sml.png)
AP1005BSQ
Specifications of AP1005BSQ
Related parts for AP1005BSQ
AP1005BSQ Summary of contents
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... Low Profile ( < 0.7mm ) ▼ Compatible with DirectFET® Package SQ Footprint and Outline Description The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. TM(A) ...
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... AP1005BSQ Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Pre-V Gate-Source Charge gs1 th Q Post-V Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 I =19A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1005BSQ o T =150 C 10V A 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
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... AP1005BSQ 10 I =15A D V =13V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON =25 C 0.1 A Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...