AP1005BSQ Advanced Power Electronics Corp., AP1005BSQ Datasheet - Page 2

• Manufacturer Part Number: AP1005BSQ
• Description: The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1005BSQ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.8
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 16.6
• Qgs (nc): 3
• Qgd (nc): 9.2
• Id(a): 19
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-SQ

BV
R
V
g
I
I
Q
Q
Q
Q
Q
Q
t
t
t
t
C
C
C
R
I
I
V
t
Q
1.Pulse width limited by Max junction temperature.
2.Pulse test
3.Surface mounted on 1 in
4.T
5.Starting T
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP1005BSQ
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs1
gs2
gd
godr
sw
rr
DSS
C
Symbol
Symbol
measured with thermocouple mounted to top (Drain) of part.
j
=25
o
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Pre-V
Post-V
Gate-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
C , L=0.1mH , R
th
th
Gate-Source Charge
Gate-Source Charge
2
copper pad of FR4 board.
Parameter
Parameter
G
gs2
=25Ω , I
2
2
2
+Q
gd
)
j
AS
=25
=24A
j
=125
o
C(unless otherwise specified)
o
2
C)
1
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
GS
DS
G
=15A, V
=15A, V
=15A
=12A
= 1.5 Ω
=V
=10V, I
=20V, V
=20V ,V
=13V
=13V
=25V
=0V, I
=10V, I
=4.5V, I
=+20V, V
=4.5V
= 10 V
=0V
GS
Test Conditions
Test Conditions
, I
D
GS
GS
D
=250uA
D
D
D
=250uA
GS
GS
=19A
=15A
=0V
=0V,
=15A
DS
=0V
=0V
=0V
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1360 2180
Typ.
16.6
Typ.
570
210
2.6
4.3
0.8
9.2
3.7
3.3
30
10
11
60
28
37
32
3
9
-
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
26.6
150
150
3.8
7.5
2.5
52
55
48
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V
2