AP1005BSQ Advanced Power Electronics Corp., AP1005BSQ Datasheet - Page 3

• Manufacturer Part Number: AP1005BSQ
• Description: The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1005BSQ

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 3.8
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 16.6
• Qgs (nc): 3
• Qgd (nc): 9.2
• Id(a): 19
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-SQ

160
120
20
16
12
80
40
8
4
0
0
6
5
4
3
2
0.0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
1.0
V
Reverse Diode
V
V
T
SD
DS
GS
j
4
=150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.0
0.5
o
T
C
A
=25
3.0
6
o
C
T
I
A
D
=25
=15A
T
4.0
1
j
=25
o
C
8
o
C
V
5.0
G
=4.0V
7.0V
6.0V
5.0V
10V
6.0
1.5
10
120
100
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
80
60
40
20
0
0
2
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=19A
=10V
Junction Temperature
1
v.s. Junction Temperature
V
T
0
T
DS
0
j
,Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
T
A
=150
50
50
3
o
C
AP1005BSQ
4
100
100
o
C)
o
C)
V
5
G
=4.0V
7.0V
6.0V
5.0V
10V
150
150
6
3