AP2603GY Advanced Power Electronics Corp., AP2603GY Datasheet - Page 2

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2603GY

Manufacturer Part Number
AP2603GY
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2603GY

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
53
Rds(on) / Max(m?) Vgs@4.5v
65
Rds(on) / Max(m?) Vgs@2.5v
120
Qg (nc)
10.6
Qgs (nc)
2.32
Qgd (nc)
3.68
Id(a)
-5
Pd(w)
2
Configuration
Single P
Package
SOT-26

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ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP2603GY
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
j
=25
=55
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=-4.2A
=-4.2A
G
D
=-1.2A, V
=-4.2A, V
=3.6Ω
=6Ω,V
=V
=-5V, I
=-20V, V
=-16V, V
=-16V
=-15V
=-15V
=0V, I
=-10V, I
=-4.5V, I
=-2.5V, I
=
=-4.5V
=0V
±12V
GS
Test Conditions
Test Conditions
, I
D
GS
D
D
=-250uA
GS
GS
=-2.8A
=-250uA
D
=-10V
D
D
GS
GS
=-4.5A
=-4.2A
=-2.0A
=0V
=0V,
=0V
=0V
D
=-1mA
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10.6
2.32
3.68
32.4
27.7
Typ.
Typ.
740
167
126
-0.1
5.9
3.6
2.6
22
9
-
-
-
-
-
-
-
-
-
±100
Max. Units
1200
Max. Units
-1.2
-1.2
120
-10
53
65
16
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
2/4

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