AP2603GY Advanced Power Electronics Corp., AP2603GY Datasheet - Page 4

• Manufacturer Part Number: AP2603GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2603GY

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 53
• Rds(on) / Max(m?) Vgs@4.5v: 65
• Rds(on) / Max(m?) Vgs@2.5v: 120
• Qg (nc): 10.6
• Qgs (nc): 2.32
• Qgd (nc): 3.68
• Id(a): -5
• Pd(w): 2
• Configuration: Single P
• Package: SOT-26

AP2603GY
0.01
100
0.1
10
1
12
10
0.1
8
6
4
2
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
V
90%
V
I
V
DS
D
Single Pulse
GS
DS
T
= -4.2A
= -16V
-V
A
=25
Q
DS
5
G
, Drain-to-Source Voltage (V)
t
o
d(on)
, Total Gate Charge (nC)
C
1
t
10
r
15
10
t
d(off)
20
100ms
t
10ms
1ms
f
DC
1s
100
25
Fig 10. Effective Transient Thermal Impedance
1000
0.001
100
0.01
10
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
0.001
G
-V
5
0.01
Single Pulse
0.1
0.05
0.2
DS
Q
GS
, Drain-to-Source Voltage (V)
0.01
9
t , Pulse Width (s)
Q
13
0.1
Q
G
Charge
GD
17
1
65mΩ
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 156℃/W
j
t
= P
f=1.0MHz
DM
T
x R
100
thja
25
+ T
Q
C
C
a
C
oss
rss
iss
1000
29
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