AP2603GY Advanced Power Electronics Corp., AP2603GY Datasheet - Page 3

• Manufacturer Part Number: AP2603GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2603GY

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 53
• Rds(on) / Max(m?) Vgs@4.5v: 65
• Rds(on) / Max(m?) Vgs@2.5v: 120
• Qg (nc): 10.6
• Qgs (nc): 2.32
• Qgd (nc): 3.68
• Id(a): -5
• Pd(w): 2
• Configuration: Single P
• Package: SOT-26

220
180
140
100
0.01
0.1
60
20
40
30
20
10
10
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
0
Fig 5. Forward Characteristic of
T
T
j
1
=150
A
=25
-V
2
-V
-V
Reverse Diode
SD
GS
o
DS
2
o
0.4
C
C
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4
3
4
0.8
6
T
5
j
=25
8
6
o
T
I
C
T
I
D
A
1.2
V
D
A
=-4.2A
=25
=-4.2A
7
=25
G
= -2.0V
10
o
-5.0V
-4.0V
-3.0V
o
C
C
8
1.6
12
9
36
32
28
24
20
16
12
1.8
1.6
1.4
1.2
0.8
0.6
1.5
0.5
8
4
0
1
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
V
Fig 6. Gate Threshold Voltage v.s.
I
T
GS
D
= -4.2A
A
= -4.5V
= 1 5 0
1
v.s. Junction Temperature
-V
Junction Temperature
T
T
DS
j
j
0
0
, Junction Temperature (
o
, Junction Temperature (
C
2
, Drain-to-Source Voltage (V)
2.01E+08
3
50
50
4
65mΩ
AP2603GY
5
100
100
V
o
o
G
C)
C)
= -2.0V
-5.0V
-4.0V
-3.0V
6
150
150
7
3/4