AP4501GD Advanced Power Electronics Corp., AP4501GD Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4501GD

Manufacturer Part Number
AP4501GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GD

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
42
Qg (nc)
9
Qgs (nc)
2
Qgd (nc)
5
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
▼ Low Gate Charge
▼ Fast Switching Speed
▼ PDIP-8 Package
▼ RoHS Compliant
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
D1
PDIP-8
Parameter
D1
1
D2
D2
3
3
S1
G1
S2
G2
3
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
Max.
N-CH BV
P-CH BV
±20
5.8
30
20
7
Pb Free Plating Product
G1
-55 to 150
-55 to 150
Rating
0.016
R
I
R
I
2
D
D
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
62.5
±20
-5.3
-4.7
-30
-20
D1
S1
G2
AP4501GD
200622051-1/7
28mΩ
50mΩ
-5.3A
-30V
Units
W/℃
℃/W
30V
Unit
W
7A
V
V
A
A
A
D2
S2

Related parts for AP4501GD

AP4501GD Summary of contents

Page 1

... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4501GD Pb Free Plating Product N-CH BV 30V DSS R 28mΩ DS(ON P-CH BV -30V DSS R 50mΩ DS(ON) I -5. ...

Page 2

... AP4501GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... I =- =-24V DS V =-4. =-15V =6Ω, =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-5A dI/dt=100A/µs AP4501GD Min. Typ. -30 - =-1mA - -0. =-250uA - =-10V ...

Page 4

... AP4501GD N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 C J 0.1 0. Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of Reverse Diode ...

Page 5

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4501GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

Page 6

... AP4501GD P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 240 190 140 ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage 100.00 10. =150 C 1.00 j 0.10 0.01 0.1 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4501GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T 0.01 Peak ...

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