AP4501GD Advanced Power Electronics Corp., AP4501GD Datasheet - Page 7

• Manufacturer Part Number: AP4501GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 9
• Qgs (nc): 2
• Qgd (nc): 5
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
10%
90%
V
V
GS
DS
V
I
DS
Single Pulse
D
-V
T
Q
=-5A
=-24V
A
DS
G
4
=25
t
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
o
1
C
t
r
8
10
t
d(off)
12
t
f
100us
1ms
10ms
100ms
1s
DC
100
16
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
Duty factor=0.5
0.02
0.01
0.05
0.2
0.1
G
0.001
5
Single Pulse
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
AP4501GD
thja
21
10
=90
j
= P
o
t
C/W
f=1.0MHz
DM
T
x R
100
25
thja
C
C
C
+ T
Q
a
iss
oss
rss
1000
29
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