AP4501GD Advanced Power Electronics Corp., AP4501GD Datasheet - Page 3

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4501GD

Manufacturer Part Number
AP4501GD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GD

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
28
Rds(on) / Max(m?) Vgs@4.5v
42
Qg (nc)
9
Qgs (nc)
2
Qgd (nc)
5
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
P-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
2
copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.
Parameter
Parameter
2
2
2
2
j
j
=25
=70
o
o
C)
C)
2
j
=25
V
Reference to 25 ℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=-1.7A, V
=-5A, V
=-5A
=-1A
=6Ω,V
=15Ω
o
=V
=-10V, I
=-30V, V
=-24V, V
=-24V
=-15V
=-25V
=0V, I
=-10V, I
=-4.5V, I
=±20V
=-4.5V
=0V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
, I
GS
D
GS
D
=-250uA
GS
=0V,
=-250uA
D
D
=-10V
D
GS
GS
=-5A
=-5A
=0V
=-3A
=0V
=0V
D
=-1mA
Min.
Min.
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.03
Typ.
Typ.
460
180
130
AP4501GD
10
27
16
21
18
9
9
2
5
7
9
-
-
-
-
-
-
-
-
±100
Max. Units
Max. Units
730
-1.2
-25
50
90
15
14
-3
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
uA
uA
nA
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
ns
Ω
V
V
S
V
3/7

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