AP4511GH-A Advanced Power Electronics Corp., AP4511GH-A Datasheet - Page 7

• Manufacturer Part Number: AP4511GH-A
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4511GH-A

• Vds: 35V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 11
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 8.6
• Pd(w): 3.125
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
0.01
100
0.1
50
40
30
20
10
16
12
10
8
4
0
0
1
0.1
0
0
Fig 11. Transfer Characteristics
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
V
DS
V
=-5V
I
Single Pulse
DS
D
T
-V
-V
5
= -6 A
= - 28V
A
Q
=25
DS
GS
2
G
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
o
1
C
10
T
j
=25
4
o
C
15
10
6
20
T
j
=150
100ms
100us
10ms
1ms
10s
1s
o
C
25
100
8
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
0.02
0.01
0.05
G
Duty factor=0.5
0.001
Single Pulse
5
-V
0.1
0.2
Q
DS
GS
, Drain-to-Source Voltage (V)
0.01
9
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
17
1
AP4511GH-A
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
21
10
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
+ T
Q
C
oss
rss
A
iss
1000
29
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