AP4578GD Advanced Power Electronics Corp., AP4578GD Datasheet

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... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDIP N-channel Parameter 3 AP4578GD Pb Free Plating Product N-CH BV 60V DSS R 64mΩ DS(ON) I 4.5A D P-CH BV -60V DSS R 125mΩ DS(ON ...

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... AP4578GD N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... D V =-48V DS V =-4. =-30V =3.3Ω, =30Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-3A dI/dt=-100A/µs AP4578GD Min. Typ. Max. Units -60 - =-1mA - -0. =-2A - 115 D =-250uA - ...

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... AP4578GD N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

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... DC 0.01 100 1000 0.0001 Fig 10. Effective Transient Thermal Impedance o T =125 AP4578GD f=1.0MHz Drain-to-Source Voltage (V) DS Fig 8. Typical Capacitance Characteristics Duty factor=0.5 0.2 0 0.05 Duty factor = t/T Peak ...

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... AP4578GD P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 170 150 130 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

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... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 0.0001 100 1000 Fig 10. Effective Transient Thermal Impedance o =150 AP4578GD f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 Duty factor = t/T Peak 0. 90℃ ...