AP4578GD Advanced Power Electronics Corp., AP4578GD Datasheet - Page 4

• Manufacturer Part Number: AP4578GD
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4578GD

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 64
• Rds(on) / Max(m?) Vgs@4.5v: 80
• Qg (nc): 9
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 4.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4578GD
110
25
20
15
10
90
70
50
5
0
4
3
2
1
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
V
0.2
V
T
o
V
Reverse Diode
SD
DS
C
1
j
GS
=150
, Source-to-Drain Voltage (V)
4
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
0.4
o
C
2
0.6
6
3
0.8
T
I
A
D
T
V
=25
8
= 2 A
j
G
=25
4
=3.0V
10V
7.0V
5.0V
4.5V
o
1
C
o
C
1.2
10
5
25
20
15
10
1.6
1.4
1.2
1.0
0.8
0.6
1.5
0.5
5
0
2
1
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
A
I
G
=150
D
V
T
=10V
=4A
v.s. Junction Temperature
Junction Temperature
DS
T
1
j
, Junction Temperature (
j
o
, Drain-to-Source Voltage (V)
0
0
,Junction Temperature (
C
2
-6.3
50
50
-5
3
o
C)
100
o
100
C)
V
4
G
=3.0V
10V
7.0V
5.0V
4.5V
150
150
5
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