AP4578GD Advanced Power Electronics Corp., AP4578GD Datasheet - Page 2

• Manufacturer Part Number: AP4578GD
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4578GD

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 64
• Rds(on) / Max(m?) Vgs@4.5v: 80
• Qg (nc): 9
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 4.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
N-CH Electrical Characteristics@T
Source-Drain Diode
AP4578GD
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
j
j
=25
=70
o
o
C)
C)
j
2
=25
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
G
D
GS
DS
=4A
=1A
=1.7A, V
=4A, V
o
=30Ω
=3.3Ω,V
C(unless otherwise specified)
=V
=10V, I
=60V, V
=48V, V
=48V
=30V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
GS
Test Conditions
Test Conditions
GS
, I
D
GS
D
=0V
=250uA
D
D
GS
D
=250uA
GS
GS
=4A
=4A
=2A
=0V
=10V
=0V
=0V
D
=1mA
Min.
Min.
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.05
Typ.
730
1.8
50
63
22
80
60
28
39
7
9
3
4
9
5
7
-
-
-
-
-
-
±100
1170
Max. Units
Max. Units
2.7
1.2
64
80
10
25
17
3
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
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